LSK170B TO-92 3L ROHS

LSK170 A/B/C/D Quality Through Innovation Since 1987 High Input Impedance, Ultra-Low Noise, Single N-Channel JFET Ultra-Low Noise at Both High & Low Frequencies With a Narrow Range of IDSS Absolute Maximum Ratings @ 25 °C (unless otherwise stated) TO-92 3L SOT-23 3L SOT-89 3L TOP VIEW TOP VIEW TOP VIEW G 3 Maximum Temperatures Storage Temperature -55 to +150°C Junction Operating Temperature -55 to +135°C Maximum Power Dissipation Continuous Power Dissipation @ +25°C 1 2 3 D G S 400mW G 1 2 1 D S S 2 G 3 D Maximum Currents Gate Forward Current IG(F) = 10mA Maximum Voltages Gate to Source VGSS = 40V Gate to Drain VGDS = 40V Features Benefits Applications Applications Cont’d  ULTRA LOW NOISE (f =1khz): en = 0.9nV/√Hz  High Breakdown Voltage: BVGSS = 40V min  High Gain: Gfs = 22mS (typ)  High Input Impedance: 20GΩ typ  Low Capacitance: 22pF max  Improved Second Source Replacement for 2SK170  For Equivalent Monolithic-Dual, See the LSK389 Series  Direct Pin-For-Pin Replacement of Toshiba's 2SK170  Optimized to Provide Low Noise at Both High and Low Frequencies With a Narrow Range of IDSS and Low Capacitance  Low Noise to Capacitance Ratio and Narrow Range of Low Value IDSS Provide Solutions for Low Noise Applications Which Cannot Tolerate High Values of Capacitance or Wide Ranges of IDSS • Audio Amplifiers and Preamps • Discrete Low-Noise Operational Amplifiers • Guitar Pickups • Effects Pedals • Microphones • Audio Mixer Consoles • Acoustic Sensors • Sonobuoys • Hydrophones  Chemical and Radiation Detectors  Instrumentation Amplifiers  Accelerometers  CT Scanners Input Stages  Oscilloscope Input Stages  Electrometers and Vibrations Detectors Description The LSK170 is specifically designed for low noise, high input impedance applications within the audio, instrumentation, medical and sensors markets. The narrow ranges of IDSS grades with the LSK170 promote ease of design, particularly in low voltage applications. The LSK170 is ideal for portable battery operated applications, and features high BVDSS for maximum linear headroom in high transient program content amplifiers. The series has a uniquely linear VGS transfer function for a stability that is highly desirable, particularly for audio front-end preamplifiers. Doc 201110 11/19/2019 Rev# A22 ECN# LSK170 The device is available in a surface mount SOT-23 package, throughhole TO-92 package and SOT-89 package. The surface mount version of the LSK170 Series creates new opportunities for engineers seeking to design lower noise circuits in compact embeddable applications where shielding and space are critical. The LSK170 series is a pin for pin replacement of the Toshiba 2SK170 and improved functional replacement for the Interfet IF1320, IF1330, IF1331, and IF4500. Contact the factory for tighter noise and other specification selections. www.linearsystems.com Page 1 of 7 LSK170 A/B/C/D High Input Impedance, Ultra-Low Noise, Single N-Channel JFET Electrical Characteristics @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC MIN BVGSS Gate to Source Breakdown Voltage -40.0 VGS(OFF) Gate to Source Pinch-off Voltage -0.2 VGS Gate to Source Operating Voltage IDSS2 Drain to Source Saturation Current TYP MAX -2.0 0.5 LSK170A 2.6 6.5 LSK170B 6.0 12.0 LSK170C 10.0 20.0 LSK170D 18.0 30.0 UNITS CONDITIONS V VDS = 0V, ID = -100µA V VDS = 10V, ID = 1nA V VDS = 10V, ID = 1mA mA VDS = 10V, VGS = 0 IG Gate Operating Current -0.5 nA VDG = 10V, ID = 1mA IGSS Gate to Source Leakage Current -1.0 nA VGs = -10V, VDs = 0V Gfs Full Conduction Transconductance 14.0 22.0 mS VDS = 10V, VGS = 0, f = 1kHz Gfs Typical Conduction Transconductance 6.0 10.0 mS VDS = 15V, ID = 1mA en Noise Voltage 0.9 1.9 nV/√Hz VDS = 10V, ID = 2mA, f = 1kHz, NBW = 1Hz en Noise Voltage 1.4 4.0 nV/√Hz VDS = 10V, ID = 2mA, f = 10Hz, NBW = 1Hz CISS Common Source Input Capacitance 20.0 pF VDS = 15V, ID = 100µA, f = 1MHz, CRSS Common Source Reverse Transfer Cap. 5.0 pF VDS = 15V, ID = 100µA, f = 1MHz, Doc 201110 11/19/2019 Rev# A22 ECN# LSK170 www.linearsystems.com Page 2 of 7 LSK170 A/B/C/D High Input Impedance, Ultra-Low Noise, Single N-Channel JFET Typical Characteristics Operating Current IG Operating Current LSK389A LSK170A – IG vs. VDS (A) IG 0.12mA -1E-08 (A) LSK389B LSK170B – IG vs. VDS 1.5mA -1E-08 0.4mA 3.6mA 0.84mA 9.0mA 1.44mA decade/div decade/div ID = 10.3mA 2.2mA 0.20mA ID = 3.04mA 0.04mA -1E-13 4.000 VDS 24.00 2.000/div (V) VDS -1E-13 4.000 VDS 2.000/div (V) 2.000/div (V) Output Conductance Output Conductance GOS (S) GOS LSK389A – GOS vs. VDS LSK170A (S) 150.0 E-06 100.0 ID = 3.04mA E-06 2.2mA 10.00/div LSK389B LSK170B – GOS vs. VDS ID = 10.3mA 7.7mA 1.44mA 15.00/div 5.5mA 0.84mA 0.4mA .0000 4.000 24.00 2.000/div (V) VDS VDS 0.12mA VDS2.000/div (V) 3.6mA 0.04mA 2mA 24.00 .0000 5.000 2.000/div (V) Doc 201110 11/19/2019 Rev# A22 ECN# LSK170 www.linearsystems.com VDS V2.000/div DS (V) 0.9mA 25.00 2.000/div (V) Page 3 of 7 LSK170 A/B/C/D High Input Impedance, Ultra-Low Noise, Single N-Channel JFET Typical Characteristics Output Characteristics ID (mA) Output Characteristics LSK389A LSK170A – ID vs. VDS 4.000 ID (mA) LSK389B – ID vs. VDS LSK170B 0V 10.00 0V -0.10V -0.05V 1.000/div 0.40/div -0.20V -0.10V -0.30V -0.15V -0.40V -0.20V -0.50V -0.25V .0000 .0000 VDS V2.500/div DS (V) 25.00 .0000 .0000 2.500/div (V) Operating Characteristics ID (mA) V2.500/div DS (V) 25.00 2.500/div (V) Operating Characteristics ID LSK389A LSK170A – ID vs. VDS 2.5 VDS (mA) 0V LSK389B LSK170B – ID vs. VDS 10.00 0V 0.25/div -0.05V 1.000/div -0.10V -0.20V -0.10V -0.30V -0.15V .0000 .0000 -0.20V -0.25V VDS V0.20/div DS (V) 2.000 .0000 .0000 0.20/div (V) Doc 201110 11/19/2019 Rev# A22 ECN# LSK170 www.linearsystems.com -0.40V -0.50V VDS V0.20/div DS (V) 2.000 0.20/div (V) Page 4 of 7 LSK170 A/B/C/D High Input Impedance, Ultra-Low Noise, Single N-Channel JFET Typical Characteristics Common Source Forward Transconductance vs. Drain Current GFS (S) LSK389A LSK170A & &B B – GFS vs. ID 25.00 E-03 Common Source Transconductance vs. Drain Current GFS (S) LSK389A LSK170A & &B B – GFS vs. ID 25.00 E-03 B B A 2.500/div 2.500/div .0000 .0000 ID (A) A ID ID 1.000/div (mA) 10.00 .0000 1 E-05 1.000/div (mA) ID LSK389A & BB – ID vs. VGS LSK170A & 1 E-02 (mA) ID IDDecade/div (A) 1 E-02 Decade/div (A) LSK389A &B B – ID vs. VGS LSK170A & 10.00 B decade/div A 1.000/div 1 E-12 .0000 VG VG.2000/div (V) .2000/div (V) -2.000 .0000 VG VG .2000/div (V) -2.0000 .2000/div (V) Doc 201110 11/19/2019 Rev# A22 ECN# LSK170 www.linearsystems.com Page 5 of 7 LSK170 A/B/C/D High Input Impedance, Ultra-Low Noise, Single N-Channel JFET Typical Characteristics Drain Current Transconductance vs. Gate-Source Cutoff Voltage 45 22 20 40 18 35 16 14 30 12 10 25 8 6 20 4 -1.1 -1.0 -.90 -.80 -.70 -.60 -.50 -.40 Doc 201110 11/19/2019 Rev# A22 ECN# LSK170 VDS = 10V ID = 2mA 1.5 1.0 0.5 0.0 10 -1.2 15 2 2.0 en-Noise Voltage (nV/√Hz) gfs @ VDS = 10V, VGS = 0V, f = 1kHz IDSS @ VDS = 10V, VGS = 0V gfs-Forward Transconductance(mS) IDSS-Saturation Drain Current(mA) 24 Equivalent Input Noise Voltage vs. Frequency www.linearsystems.com 100 1,000 10,000 100,000 f – Frequency (Hz) Page 6 of 7 LSK170 A/B/C/D High Input Impedance, Ultra-Low Noise, Single N-Channel JFET Ordering Information STANDARD PART CALL-OUT CUSTOM PART CALL-OUT LSK170A TO-92 3L RoHS LSK170A TO-92 3L RoHS SELXXXX LSK170B TO-92 3L RoHS LSK170B TO-92 3L RoHS SELXXXX LSK170C TO-92 3L RoHS LSK170C TO-92 3L RoHS SELXXXX LSK170D TO-92 3L RoHS LSK170D TO-92 3L RoHS SELXXXX LSK170A SOT-23 3L RoHS LSK170A SOT-23 3L RoHS SELXXXX LSK170B SOT-23 3L RoHS LSK170B SOT-23 3L RoHS SELXXXX LSK170C SOT-23 3L RoHS LSK170C SOT-23 3L RoHS SELXXXX LSK170D SOT-23 3L RoHS LSK170D SOT-23 3L RoHS SELXXXX LSK170A SOT-89 3L RoHS LSK170A SOT-89 3L RoHS SELXXXX LSK170B SOT-89 3L RoHS LSK170B SOT-89 3L RoHS SELXXXX LSK170C SOT-89 3L RoHS LSK170C SOT-89 3L RoHS SELXXXX LSK170D SOT-89 3L RoHS LSK170D SOT-89 3L RoHS SELXXXX CUSTOM PARTS INCLUDE SEL + 4 DIGIT NUMERIC CODE) Package Dimensions SOT-23 TO-92 3 Lead SOT-23 3 Lead SOT-89 3 Lead 0.89 1.03 0.37 0.51 1 1.78 2.05 2.80 3.04 3 2 1.20 1.40 2.10 2.64 0.89 1.12 0.085 0.180 0.013 0.100 0.55 DIMENSIONS IN MILLIMETERS Notes 1. 2. 3. 4. Absolute maximum ratings are limiting values above which serviceability may be impaired. Pulse Test: PW ≤ 300µs, Duty Cycle ≤ 3% All characteristics MIN/TYP/MAX numbers are absolute values. Negative values indicate electrical polarity only. When ordering include the full Linear Systems part number and package type. Linear Systems creates custom parts on a case by case basis. To learn whether Linear Systems can meet your requirements, please send your drawing along with a detailed description of the device specifications to sales@linearsystems.com. One of our qualified representatives will contact you. 5. All standard parts are RoHS compliant. Contact the factory for availability of non-RoHS parts. 6. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. 7. Voltage specifications are not tested 100%, but guaranteed by lot sampling. Contact the factory if 100% test is required. Doc 201110 11/19/2019 Rev# A22 ECN# LSK170 www.linearsystems.com Page 7 of 7